3-D Kinetic Monte Carlo Algorithm for Gallium Nitride Nano-Column Growth Simulation

Crystal growth plays a fundamental role in the semiconductor industry, as the performance and reliability of devices depend heavily on the quality and purity of the materials produced. Up to this date, there have been limited tools available to accurately simulate epitaxial growth, making it difficult to predict and optimize crystal quality and growth conditions. To address this gap, we have developed a novel simulation tool based on the kinetic Monte Carlo Method. We demonstrate how this tool can model selective area growth of Gallium Nitride into Nano-columns, enabling deeper insights into the process and supporting the advancement of next-generation semiconductor technologies.