A Bottom-Up InGaN Technology for Ultra-High Brightness MicroLED Displays

We present a bottom-up technology for producing dislocation-free, strain-relaxed InGaN microLEDs in the form of sub-micron scale hexagonal platelets. The use of InGaN barrier material enables high Indium-contents quantum wells with emission tunable from blue to deep red (>670nm). These platelets do not suffer from plasma induced damage and exhibit internal quantum efficiency values up to 60% for deep red emitting quantum wells. We further show red microLEDs exhibiting dominant wavelengths above 630nm for drive currents up to 50A/cm2, which is well suited for wide color gamut, and ultra-high brightness displays.