A novel bottom-up approach for InGaN/GaN based pyramidal micro-LEDs

New 3D uLED-structures based on a novel bottom-up approach based on InGaN/GaN pyramidal quantum well structures. The pyramidal uLEDs are fabricated by means of a re-growth process on lithographically patterned SiN-masked GaN templates. Quantum wells on the facets of the um-sized pyramids act as the active emitters. The emission from pyramidal uLEDs have recently demonstrated with a high brightness and external quantum efficiency (EQE) in a wide spectral range. The high quality of homogeneous pyramidal uLED structures combined with a flexible design paves a promising route for uLEDs