MicroLED display integration on 300mm Advanced CMOS platform

Tight pitch integration of compound semiconductor with advanced node CMOS like in microLED displays requires a full wafer level monolithic approach in 300mm. At pitches below 5um, the CMOS bonding is at the center and cannot be considered as an afterthought of a great LED process. Here we show a 9150ppi µLED process-flow with backplane integration that is realized in a 300mm CMOS pilot line using standard volume manufacturing equipment with a similar integration scheme as is done for 3D-stacked backside illuminated imager (BSI). This includes the realization of wafer level optics for beam-shaping. The achieved brightness exceeds 1Mnits. We discuss the inter-dependency of pitch vs manufacturing yield including epi-defectivity and epi-uniformity.