top of page

Noam Shapiro

InZiv

* All members of the platform can watch the entire presentation.

 

Please register to become a member.

Noam Shapiro | InZiv: Why is your microLED display's brightness uniformity so poor? Your PL inspection is blind to the root cause.

00:10:01 - 00:11:25

Other snippets from this talk

Summary of the clip:

Why is your microLED display's brightness uniformity so poor? Your PL inspection is blind to the root cause.

A critical deficiency of photoluminescence (PL) is its complete inability to provide electrical information, as it uses optical rather than electrical excitation. This clip highlights the danger of this data gap by showing an IV (current-voltage) curve analysis of multiple microLED chips from a single wafer. The results reveal significant electrical non-uniformity that PL inspection would completely miss, which is a primary driver of poor display quality.

The IV plot demonstrates that when the same voltage is applied to different microLEDs, they can draw vastly different amounts of current. This variation in the forward voltage (Vf) is a critical performance parameter. Chips with different Vf characteristics will have different brightness levels and efficiencies when driven by a common backplane voltage, leading directly to poor display uniformity, also known as mura.

The ramifications of this electrical variation are severe, impacting not only brightness uniformity but also power consumption and device lifetime. Imbalanced voltages and currents across pixels can cause differential aging, leading to burn-in and reduced display lifespan. Only electroluminescence (EL) testing, which directly measures the IV curve of each chip, can capture this vital data needed for binning, sorting, and process feedback to improve uniformity.

In this short video, you can learn:
* The fundamental inability of PL to measure crucial electrical properties like the IV curve.
* How IV curve variations across a single wafer directly cause brightness non-uniformity (mura).
* The long-term impact of electrical non-uniformity on display lifetime and power efficiency.
๐Ÿ“‹ **Clip Abstract** Photoluminescence (PL) is blind to the electrical variations between microLEDs, a critical factor for display quality. This clip explains how only Electroluminescence (EL) can measure IV curves, revealing forward voltage non-uniformity that directly causes mura, impacts power efficiency, and reduces display lifetime.
๐Ÿ”— Link in comments ๐Ÿ‘‡

#MicroLEDDisplays, #ELTesting, #IVCurveAnalysis, #DisplayMura, #ARDisplays, #AdvancedDisplays

This is a highlight of the presentation:

Unleashing microLEDโ€™s Future: The Power of Electroluminescence Testing

MicroLEDs, AR/VR Displays, Micro-Optics 2025: Innovations, Start-Ups, Market Trends

Online | TechBlick platform

Organised By:

TechBlick

MicroLED Connect

More Highlights from the same talk.

00:02:45 - 00:05:13

Why does photoluminescence fail to guarantee functional microLED displays?

Why does photoluminescence fail to guarantee functional microLED displays?

Standard microLED inspection relies heavily on photoluminescence (PL), which excites the active region optically to measure emission properties. However, PL misses critical electrical defects because it does not replicate the final device operating conditions. To capture true performance, manufacturers must employ electroluminescence (EL), which excites the junctions via current injection.

Electroluminescence serves as the gold standard because it provides direct electrical feedback and accurately forecasts how the microLED will perform in the target display backplane. Unfortunately, implementing standard EL on a wafer scale introduces two massive issues: physical contact damage to micro-scale pads and extremely slow probing speeds.

With conventional EL probers testing at a sluggish rate of just one LED per second, completing an inspection run on a single dense microLED wafer would take roughly two entire months. This throughput bottleneck has forced the display industry to rely on suboptimal testing methods, leading to poor yields and skyrocketing manufacturing costs.

In this short video, you can learn:
* The fundamental thermodynamic and physical differences between PL and EL testing
* Why electrical excitation is required to predict final display performance
* The crippling throughput bottlenecks and mechanical damage risks of conventional probe testing

๐Ÿ“‹ **Clip Abstract** This clip explores the critical differences between photoluminescence and electroluminescence in microLED inspection. It highlights why standard electrical probing is too slow and mechanically risky for volume manufacturing, despite being the only accurate way to predict device performance.

#Electroluminescence, #MicroLEDInspection, #WaferLevelTesting, #ElectricalDefectDetection, #MicroLEDDisplays, #DisplayMetrology

00:07:30 - 00:09:53

Can we scan 9 million microLEDs electrically without touching or destroying the wafer?

Can we scan 9 million microLEDs electrically without touching or destroying the wafer?

Overcoming the speed and contact damage limitations of standard electroluminescence is the Holy Grail of microLED manufacturing. A high-throughput, non-damaging EL wafer inspection system can scan up to 6 million chips per hour. This reduces a full wafer scan time from a commercially non-viable two months down to just one hour.

This rapid testing capability functions by safely exciting and evaluating 1,600 microLEDs every single second. The resulting dataset provides display engineers with critical parameter mapping, including go/no-go functionality, individual pixel emission intensity, precise dominant wavelength, and luminance measurements.

Most importantly, the platform extracts full current-voltage (IV) curves and electrical properties without physical damage to either vertical or flip-chip architectures. Armed with these comprehensive IV characteristics, manufacturers can establish precise pass-fail thresholds to filter out defective dies before mass transfer.

In this short video, you can learn:
* How high-throughput EL testing achieves scanning speeds of 1,600 chips per second
* The critical parameters captured, including dominant wavelength, luminance, and IV curves
* How non-damaging inspection protects delicate contact pads while enabling automated mass production

๐Ÿ“‹ **Clip Abstract** This clip introduces high-throughput, non-damaging electroluminescence inspection capable of testing 6 million microLEDs per hour. It details how capturing rapid optical and electrical data helps manufacturers secure high transfer yields and lower production costs.

#NonContactElectroluminescence, #MicroLEDMetrology, #WaferLevelInspection, #MassTransferYield, #MicroLEDDisplays, #DisplayManufacturing

00:05:13 - 00:07:09

How many "good" microLEDs are actually dead silent under electrical current?

How many "good" microLEDs are actually dead silent under electrical current?

Relying solely on optical photoluminescence (PL) creates a massive yield trap due to false positives. PL can cause defective microLEDs to glow under external optical excitation, suggesting they are functional when they actually suffer from electrical open circuits or leakage. When these chips proceed to transfer, they fail to illuminate, driving down panel yields.

Scalability compounds this inspection challenge as the industry transitions from legacy LED architectures to micro-scale devices. A typical traditional LED wafer holds around 9,000 chips, whereas a single microLED wafer can contain up to 9 million chips, scaling the inspection overhead by three orders of magnitude.

Furthermore, diverse contact layouts (vertical vs. lateral stacks) and varying substrate sizes (from 4-inch to 12-inch wafers) make uniform testing difficult. Conventional mechanical contact probing at this density leads to severe micro-abrasions and contact pad destruction, visible under atomic force microscopy (AFM).

In this short video, you can learn:
* The phenomenon of PL false positives and how they escape to final assembly
* The massive scaling challenge of testing 9 million microLEDs per wafer
* How physical contact probing causes irreversible damage to micro-contact pads

๐Ÿ“‹ **Clip Abstract** This segment highlights how optical inspection methods hide critical electrical defects, resulting in costly false positives during microLED production. It also addresses the structural variations and physical damage risks of trying to scale traditional contact probing to 9 million chips per wafer.

#PhotoluminescenceFalsePositives, #MicroLEDMetrology, #ContactProbingDamage, #ElectroOpticalTesting, #MicroLEDDisplays, #ARMicrodisplays

More Snippets
CONTACT US

KGH Concepts GmbH

Mergenthalerallee 73-75, 65760, Eschborn

+49 17661704139

venessa@techblick.com

TechBlick is owned and operated by KGH Concepts GmbH

Registration number HRB 121362

VAT number: DE 337022439

  • LinkedIn
  • YouTube

Sign up for our newsletter to receive updates on our latest speakers and events AND to receive analyst-written summaries of the key talks and happenings in our events.

Thanks for submitting!

© 2026 by KGH Concepts GmbH

bottom of page