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Simon Ogier

Smartkem

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Simon Ogier | Smartkem: How does incorporating a back gate into a transistor improve the performance of logic inverters?

00:07:39 - 00:07:55

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Summary of the clip:

How does incorporating a back gate into a transistor improve the performance of logic inverters?

The speaker explains how incorporating a back gate into the transistor design improves the performance of logic inverters. By making different types of connections to the back gate, the dynamic load can be manipulated to achieve a larger swing of resistance. This enhancement allows the voltage rail to swing from rail to rail during switching, resulting in improved performance.

The use of a back gate also enables the inverter to operate at lower voltages with higher gain. This is a significant improvement over the previous design using only P-type transistors, which suffered from low gain and required high operating voltages. Furthermore, the back gate configuration reduces the current draw of the device in both states.

In the previous design, the current draw was in the tens of microamps, making it power-hungry even when not actively switching. With the back gate, the current draw is reduced to the microamp range, improving power consumption by a factor of 10 or more. This also results in a larger noise margin, making the circuit more tolerant to variations and improving its overall stability.

In this short video, you can learn:

* The role of the back gate in enhancing the dynamic load characteristics.
* The benefits of back gate integration in terms of voltage swing and gain.
* The impact on power consumption and noise margin in logic inverters.

📋 **Clip Abstract** This segment describes the performance enhancements achieved by incorporating a back gate into the transistor design of logic inverters, highlighting improvements in voltage swing, gain, power consumption, and noise margin. It emphasizes the benefits of this configuration for creating more efficient and stable logic circuits.
🔗 Link in comments 👇

#BackGateTransistor, #LogicInverters, #DynamicLoadControl, #LowPowerLogic, #SemiconductorDesign, #VLSI

This is a highlight of the presentation:

OTFT circuit developments enabling low-voltage flexible processors

The Future of Electronics RESHAPED 2025

22-23 October 2025

Estrel Congress Centre, Berlin

Organised By:

TechBlick

More Highlights from the same talk.

08:33 - 10:39

Why are we still trying to transfer millions of microLEDs when we can print the backplane directly on top of them?

Why are we still trying to transfer millions of microLEDs when we can print the backplane directly on top of them?

Traditional microLED display manufacturing suffers from massive yield losses due to the delicate transfer and eutectic bonding processes required to connect individual chips to a pre-fabricated backplane. SmartKem reverses this entire manufacturing paradigm by fabricating Organic Thin Film Transistors (OTFTs) directly on top of the native microLED wafer.

By utilizing low-temperature liquid-coatable inks processed under 80°C, the organic semiconductor and dielectric layers can be deposited without damaging the underlying GaN microLED structures. Lithographically defined vias and sputtered metal contact layers replace the unreliable, high-thickness metal bumps and liftoff processes common to standard transfer schemes.

This monolithic approach has successfully demonstrated active-matrix displays on native sapphire wafers across multiple pitches down to 100 microns. The resulting stack provides a planarized, robust configuration where the drive circuitry sits natively on the emitter, bypassing the mechanical alignment and bonding bottlenecks of mass transfer.

In this short video, you can learn:
* How direct-on-wafer TFT fabrication eliminates the need for expensive eutectic bonding and liftoff steps.
* The role of low-temperature liquid-coatable dielectric and semiconductor inks in preserving GaN performance.
* Visual proof-of-concept displays operating at 100-micron and 1-millimeter pitches on native sapphire.

📋 **Clip Abstract** This clip explains how fabricating OTFT backplanes directly on native microLED wafers bypasses mass transfer alignment issues. Simon Ogier outlines the low-temperature photolithographic process used to establish reliable sputtered contacts without metal bumping.

🔗 Link in comments 👇

#OTFT, #MonolithicIntegration, #DirectOnWafer, #OrganicSemiconductors, #MicroLEDDisplays, #PrintedElectronics

14:42 - 16:18

Can low-mobility organic transistors actually drive ultra-bright microLED displays?

Can low-mobility organic transistors actually drive ultra-bright microLED displays?

Skeptics often dismiss Organic Thin Film Transistors (OTFTs) for active-matrix displays due to their relatively low carrier mobility compared to LTPS or metal oxides. However, display brightness depends on a systemic balance between emitter efficiency, aperture ratio, and the drive current supplied by the transistor layout.

SmartKem's modeled and fabricated pixel layouts demonstrate that by optimizing the drive transistor's channel width-to-length ratio, OTFTs can supply ample current to achieve extreme luminance levels. In a 254 PPI display configuration, a dual-gate OTFT design successfully drives microLEDs to an impressive 40,000 nits.

Because the backplane is processed directly on top of downward-emitting microLEDs, the entire pixel area can be utilized for the drive circuitry without compromising the aperture ratio. This design freedom allows for wider transistor channels that easily overcome mobility limitations, offering a viable path for high-brightness signage and outdoor displays.

In this short video, you can learn:
* The physics of how optimized transistor dimensions compensate for lower organic semiconductor carrier mobility.
* Quantitative brightness benchmarks showing OTFTs driving microLEDs up to 40,000 nits.
* The architectural advantage of downward-emitting microLEDs in maximizing backplane circuit area.

📋 **Clip Abstract** This clip addresses the industry skepticism surrounding OTFT mobility limits when driving power-hungry microLED emitters. Simon Ogier provides quantitative data showing that optimized dual-gate organic backplanes can achieve brightness levels up to 40,000 nits.

🔗 Link in comments 👇

#OTFT, #MicroLEDDisplays, #DualGateOTFT, #DownwardEmittingMicroLED, #ActiveMatrixBackplanes, #FlexibleElectronics

11:02 - 13:08

Can a "chip-first" transfer sheet approach slash microLED GaN material costs by over 95%?

Can a "chip-first" transfer sheet approach slash microLED GaN material costs by over 95%?

While monolithic fabrication on native sapphire works for small, ultra-fine-pitch displays, it becomes economically unviable for larger form factors because of the high cost of sapphire and GaN area. To solve this, a hybrid "chip-first" approach places microLEDs onto a temporary transfer sheet, effectively spreading them out to match the final display's pitch.

Once the microLEDs are spaced across the large-area transfer sheet, a thick dielectric layer planarizes the surface, covering the large step heights of the chips. Vias are then lithographically patterned down to the anode and cathode, allowing a single-piece backplane to be sputtered and processed directly on top of the assembly.

This strategy dramatically reduces the bill of materials, dropping the GaN cost of a smartwatch display from roughly $83 to just $2. Furthermore, by releasing the carrier glass, manufacturers can yield highly flexible, large-area microLED displays using standard photolithography and sputtering instead of fragile, expensive tiling methods.

In this short video, you can learn:
* The economic contrast between monolithic sapphire integration and the hybrid transfer sheet method.
* How thick dielectric planarization allows processing high-yield backplanes on top of transferred microLEDs.
* The pathway to scaling microLED displays up to Gen 8.5 fabrication lines without thermal evaporation or liftoff.

📋 **Clip Abstract** This clip introduces a hybrid "chip-first" manufacturing process that spreads microLEDs onto a transfer sheet before fabricating the OTFT backplane on top. This technique yields a dramatic reduction in GaN substrate costs while enabling thin, flexible display form factors.

🔗 Link in comments 👇

#ChipFirstTransfer, #DielectricPlanarization, #OTFTBackplane, #MicroLEDTransfer, #FlexibleDisplays, #MicroLEDDisplays

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