Micro-LED Displays in a Monolithic GaN System

Despite the promising features of GaN-based micro-LED displays, their application has been impeded due to complexities in incorporating transistor logic and crafting multi-color emissions. Our research presents a comprehensive single wafer approach, capitalizing on GaN for micro-LEDs, transistor integration, and adjustable InGaN color-tunability. We showcase superior GaN MOSFETs with impressive on-off ratios exceeding eight orders of magnitude and electron mobility surpassing 300 cm2/V*s. These are vertically integrated with micro-LEDs for enhanced functionality. By manipulating different crystal planes, we engineer color-tunable InGaN micro-LEDs, enabling emissions from 640 to 425 nm. Our methods involve MOCVD growth and conventional semiconductor tools for fabrication. This research illustrates the multitude of advantages offered by a fully-integrated GaN-based solution, paving the way for the future of micro-LED displays.