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Soeren Steudel

MICLEDI microdisplays

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Soeren Steudel | MICLEDI microdisplays: Why is a 300mm semiconductor foundry platform mandatory for consumer-grade AR microLED displays?

00:02:16.800 - 00:03:29.200

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Why is a 300mm semiconductor foundry platform mandatory for consumer-grade AR microLED displays?

To achieve consumer-ready augmented reality glasses, microLED displays must hit sub-3-micron pixel pitches while maintaining exceptional image uniformity. This extreme pixel density requires highly advanced backplane driver nodes, specifically in the 40nm to 22nm range, which are exclusively manufactured on 300mm silicon wafers. Attempting to integrate microLEDs onto these advanced backplanes necessitates an unprecedented level of mechanical and lithographic precision.

Soren Steudel explains that a 3-micron pixel pitch dictates a wafer-to-wafer hybrid bonding alignment accuracy of 200 nanometers or less. Additionally, incorporating wafer-level beam-shaping optics demands critical dimensions of 100 nanometers with overlay tolerances of just 20 nanometers. These sub-micron tolerances are virtually impossible to yield reliably on legacy 150mm or 200mm equipment.

By leveraging a fully automated 300mm pilot line, MICLEDI bypasses manual R&D handling and aligns its process flow with standard commercial foundry tools. This transition to a mature, high-volume semiconductor manufacturing environment is the key to driving down costs and securing the yield levels necessary for consumer market adoption.

In this short video, you can learn:
* Why advanced CMOS nodes (40nm down to 22nm) are required to drive and compensate microLED pixels for AR.
* The sub-200nm alignment tolerances needed for hybrid bonding at a 3-micron pixel pitch.
* How 300mm automated pilot lines solve the scaling and yield bottlenecks of legacy fab sizes.
šŸ“‹ **Clip Abstract** Migrating microLED manufacturing to 300mm silicon foundries is essential because only advanced CMOS nodes can provide the pixel-level drive compensation required for AR. This transition enables the sub-200nm alignment and lithographic precision needed to successfully integrate wafer-level optics and microLED frontplanes.

#HybridBonding, #CMOSBackplane, #WaferLevelOptics, #300mmFoundry, #AugmentedRealityDisplays, #MicroDisplays

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Mini- & Micro-LED Displays 2022: Markets, Manufacturing Innovations, Applications, Promising Start-ups

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00:04:18.500 - 00:05:21.900

How do you process microLEDs on 300mm silicon lines when 300mm GaN epiwafers do not exist?

How do you process microLEDs on 300mm silicon lines when 300mm GaN epiwafers do not exist?

A major bottleneck in microLED manufacturing is the unavailability of native 300mm Gallium Nitride (GaN) epitaxial wafers. While silicon foundries operate exclusively on 300mm lines, commercial GaN-on-silicon or GaN-on-sapphire wafers are limited to 150mm or 200mm. To bridge this gap, MICLEDI developed a proprietary wafer reconstruction technique adapted from wafer-level packaging.

The process begins by dicing high-quality, commercial 150mm or 200mm epiwafers into display-sized dies. These GaN dies are then precisely redistributed and embedded onto a standard 300mm silicon carrier wafer. Once stabilized, the original growth substrate is removed, and the entire surface is planarized using chemical mechanical polishing (CMP).

This reconstructed wafer features perfectly flat, stress-free GaN dies with only 1 micrometer of epi material remaining. This approach allows the reconstituted wafer to be processed in a standard 300mm CMOS foundry toolset just like a native silicon wafer. It also enables early-stage defect inspection, allowing manufacturers to filter out bad epi areas before final integration.

In this short video, you can learn:
* The packaging-derived reconstitution method used to scale 150/200mm GaN epi to 300mm silicon wafer lines.
* How substrate removal and planarization yield a stress-free, 1-micron-thick active GaN layer on silicon.
* How reconstituting wafers allows for defect screening to improve final microLED display yields.
šŸ“‹ **Clip Abstract** MICLEDI overcomes the lack of 300mm GaN epiwafers by dicing and reconstructing smaller commercial GaN wafers onto a 300mm silicon carrier. This reconstituted wafer is planarized to a 1-micron active layer, making it fully compatible with automated CMOS foundry tools.

#WaferReconstruction, #GaNonSilicon, #HeterogeneousIntegration, #CMOSFoundry, #MicroLEDDisplays, #AugmentedRealityDisplays

00:08:33.300 - 00:10:05.900

Why is standard microLED wall-plug efficiency a misleading metric for AR waveguide displays?

Why is standard microLED wall-plug efficiency a misleading metric for AR waveguide displays?

In augmented reality design, standard microLED wall-plug efficiency numbers can be highly deceptive. Traditional GaN microLEDs exhibit a Lambertian emission profile, radiating light in all directions. However, typical AR diffractive waveguides can only capture and propagate light that enters within a narrow acceptance angle of roughly plus or minus 20 degrees.

For an unshaped Lambertian emitter, only about 11% of the emitted light falls within this usable waveguide cone, wasting the remaining 89% as heat and internal glare. To solve this, MICLEDI integrates pixel-level, wafer-level optics (WLO) directly on top of 1-micron emitters. These micro-lenses bend shallow-angle light upward, doubling the usable light coupled into the waveguide to over 20%.

Furthermore, this wafer-level lens integration is combined with high-metal absorber layers to control optical crosstalk. By collimating the beam and isolating individual emitters, they achieve an on/off contrast ratio of over 20 dB between neighboring pixels. This dramatically improves both the system-level power efficiency and the MTF of the projected AR image.

In this short video, you can learn:
* Why only 11% of Lambertian microLED emission is typically accepted by AR waveguides.
* How wafer-level micro-lenses reshape the emission profile to double the light coupling efficiency.
* The role of high-metal absorber layers in reducing optical crosstalk and achieving a 20 dB pixel isolation contrast.
šŸ“‹ **Clip Abstract** Standard microLED wall-plug efficiency is often wasted in AR because waveguides can only accept light within a tight +/- 20-degree cone. Direct integration of wafer-level collimating lenses and metal absorber layers solves this by doubling the usable light and eliminating pixel crosstalk.

#WaferLevelOptics, #WaveguideCoupling, #PixelIsolation, #LambertianEmission, #MicroLEDDisplays, #ARWaveguides

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