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Mini- & Micro-LED Displays: Markets, Manufacturing Innovations, Applications, Promising Start-ups

30 Nov - 1 Dec 2022
Virtual Event

This is the first-ever event worldwide dedicated to mini and microLED technologies. It will highlight the full spectrum of technological and market developments in the field, covering all aspects including market analysis, novel LED growth on Si and other substrates, innovative transfer techniques, latest color conversation and novel approaches to RGB displays, drivers and backplanes, repair and inspection, manufacturing and scale up, products and demonstrators, etc. The event will bring together OEMs, leading market researchers, as well as innovative start-ups and commercially impactful researchers. This event will be part of the TechBlick online event series and will be specifically co-located with an event on "Quantum Dots: Material Innovations and Commercial Applications.


For the 2023 agenda please visit here

Market Analysis and Forecasts | microLED | GaN uLED on Si wafers | Laser-Based Transfer Technologies | Pick and Place | Innovative Transfer Technologies | Stretchable MicroLEDs | MicroLEDs on CMOS | microTransfer Printing | Electrohydrodynamic Printing | Quantum Dots | Color Conversation | Nanoimprinting | Nanowire LEDs | Microbumps | Massive Parallel Transfer | Perovskite Quantum Dots | red ultra-small GaN microLEDs | AR/VR | Silicon Display | OTFTs | Microdispensing | Tiling | Repair and Inspection | Start Ups | Manufacturing | Scale Up

1pm - 9pm

CET:

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Leading global speakers include:
Samsung
MICLEDI microdisplays
Quantum Solutions
ASMPT
Quantum Science
XTPL
QDI Systems
Eindhoven Univeristy of Technology
Morphotonics
Nanosys
Taiwan Nanocrystals
EPISTAR Corporation (A Member of Ennostar)
NTHU QLabs
Fraunhofer IAP
Sharp
Omdia Display
3D‑Micromac
Terecircuits
ALLOS Semiconductors
Holst Centre
CEA
QustomDot
PlayNitride
SUSTech
Komori Corp
SmartKem
Atotech
UC Santa Barbara
KIMM
NS Nanotech
STMicroelectronics
Yole Intelligence
Enjet

Avantama AG
Scrona
VueReal
HsinLight
Coherent LaserSystems
Saphlux
Palomaki Consulting
Luxnour
MicroLED Industry Association

Full Agenda

The times below is Central European Times (CET).
On the platform the times will automatically be changed to your time zone

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30 Nov 2022

TechBick

Day 1 Session 1

Wednesday

12.50PM

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Khasha Ghaffarzadeh

Talk Demo

Day 1 Session 1

12.50PM

Watch Demo Video
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30 Nov 2022

Samsung

The Progress of Advanced QD Technology in Next Generation Display

Wednesday

1.00PM

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Tae-Gon Kim

Principal researcher

Colloidal quantum dots (QDs) have been known to be the best candidates for emissive materials owing to their unique optical properties including high color purity and quantum efficiency. Cd-based QDs like CdSe, CdS, and CdTe have been extensively studied and their synthesis and application methods are very well developed, despite their potential harmful effects on health and the environment. Instead, InP QDs have been considered as the best alternative because of their band gaps corresponding to visible light as well as their relatively low toxicity. However, they could be easily oxidized to InPOx and have weak electronic tolerance to surface defects due to their relatively high covalent character. In this presentation, I will talk InP-based QDs showing almost unity photoluminescence quantum efficiency and long-term stability on high power blue irradiation. Based on this superior optical properties, the QDs could be applied for the color conversion pixels on blue OLED display.

The Progress of Advanced QD Technology in Next Generation Display

1.00PM

Colloidal quantum dots (QDs) have been known to be the best candidates for emissive materials owing to their unique optical properties including high color purity and quantum efficiency. Cd-based QDs like CdSe, CdS, and CdTe have been extensively studied and their synthesis and application methods are very well developed, despite their potential harmful effects on health and the environment. Instead, InP QDs have been considered as the best alternative because of their band gaps corresponding to visible light as well as their relatively low toxicity. However, they could be easily oxidized to InPOx and have weak electronic tolerance to surface defects due to their relatively high covalent character. In this presentation, I will talk InP-based QDs showing almost unity photoluminescence quantum efficiency and long-term stability on high power blue irradiation. Based on this superior optical properties, the QDs could be applied for the color conversion pixels on blue OLED display.

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30 Nov 2022

Omdia Display

Micro LED Display Market and Technology

Wednesday

1.20PM

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Jerry Kang

Research Manager

Micro LED display has been considered as the next generation self-emitting display technology, because LED has been known as better luminance efficiency, durability & reliability than OLED. Lots of companies have been suggested about the key technologies of the manufacturing micro LED chips, intermediate process, manufacturing backplane, mass transferring, chip bonding & repair process. But, in this moment, there are only a few applications with micro LED display yet due to significant technical issues. In this speech, we will check the current status, technical issues & market forecast of micro LED display technology. Especially, we will review these agenda with analyzing the recent studies, prototypes & products from lots of companies. So, we can suggest that how the micro LED display should be developed and focused in the future.

Micro LED Display Market and Technology

1.20PM

Micro LED display has been considered as the next generation self-emitting display technology, because LED has been known as better luminance efficiency, durability & reliability than OLED. Lots of companies have been suggested about the key technologies of the manufacturing micro LED chips, intermediate process, manufacturing backplane, mass transferring, chip bonding & repair process. But, in this moment, there are only a few applications with micro LED display yet due to significant technical issues. In this speech, we will check the current status, technical issues & market forecast of micro LED display technology. Especially, we will review these agenda with analyzing the recent studies, prototypes & products from lots of companies. So, we can suggest that how the micro LED display should be developed and focused in the future.

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30 Nov 2022

EPISTAR Corporation (A Member of Ennostar)

The Way from Mini to Micro LED Display

Wednesday

1.40PM

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SY Deng

Issues and experience of mini LED adapted into the display stepping to address micro LED display outlook.

The Way from Mini to Micro LED Display

1.40PM

Issues and experience of mini LED adapted into the display stepping to address micro LED display outlook.

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30 Nov 2022

SUSTech

III-Nitride-Based Micro-LED Displays & its Applications

Wednesday

2.00PM

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George Zhaojun Liu

Associate Professor

III-Nitride-Based Micro-LED Displays & its Applications

2.00PM

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30 Nov 2022

Networking Break

Meet The Speakers/Networking

Wednesday

2.20PM

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Talk Demo

Meet The Speakers/Networking

2.20PM

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30 Nov 2022

ASMPT

Transfer Technologies for Mini- and Micro- LEDs

Wednesday

2.45PM

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Chun Ting Lau

Transfer Technologies for Mini- and Micro- LEDs

2.45PM

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30 Nov 2022

Coherent LaserSystems

Lasers are a Key Enabling Manufacturing Technology for MicroLED Displays

Wednesday

3.00PM

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Jan Brune

Manager Excimer Applications Lab

The roadmaps for MicroLED sizes are clearly indicating that future manufacturing technologies needs to be prepared for sizes down to 5 µm. Some current technologies adapted from MiniLED production are capable to process today´s MicroLED´s of around 50 µm but running into yield and basic challenges for the next generations.
Lasers are a key enabling manufacturing technology. This is because lasers have an unrivalled ability to yield smaller and more precise features at high throughput, and to work without physically damaging or overheating delicate parts.
Our presented laser processing technologies are capable to process very small MicroLED´s either from the growth (EPI) wafer, called the Laser Lift-off (LLO) or the mass transfer from temporary carriers. This is a future-proof technology approach and help MicroLED display makers to invest once, adapt a technology for the next years, and transfer the processing technologies into mass production.
We will present our latest information and results about laser processing solutions for MicroLED displays – from very small to very large displays.

Lasers are a Key Enabling Manufacturing Technology for MicroLED Displays

3.00PM

The roadmaps for MicroLED sizes are clearly indicating that future manufacturing technologies needs to be prepared for sizes down to 5 µm. Some current technologies adapted from MiniLED production are capable to process today´s MicroLED´s of around 50 µm but running into yield and basic challenges for the next generations.
Lasers are a key enabling manufacturing technology. This is because lasers have an unrivalled ability to yield smaller and more precise features at high throughput, and to work without physically damaging or overheating delicate parts.
Our presented laser processing technologies are capable to process very small MicroLED´s either from the growth (EPI) wafer, called the Laser Lift-off (LLO) or the mass transfer from temporary carriers. This is a future-proof technology approach and help MicroLED display makers to invest once, adapt a technology for the next years, and transfer the processing technologies into mass production.
We will present our latest information and results about laser processing solutions for MicroLED displays – from very small to very large displays.

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30 Nov 2022

Eindhoven Univeristy of Technology

INSPIRE: InP on SiN photonic integrated circuits realized through wafer-scale micro-transfer printing

Wednesday

3.15PM

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Martijn Heck

Professor

INSPIRE: InP on SiN photonic integrated circuits realized through wafer-scale micro-transfer printing

3.15PM

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30 Nov 2022

Holst Centre

Laser-Assisted High-throughput microLED Assembly

Wednesday

3.30PM

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Gari Arutinov

Team Leader & Innovator

With the growing demand for ever-smaller devices, such as mini- and microLED displays with higher resolution rates, there is an unstoppable trend towards miniaturisation of components. High-speed, mass-production of these electronics is getting more and more difficult, because the handling and accurate placement of these tiny components is very challenging. Each component needs to be carefully selected, transferred and then accurately placed and assembled with interconnects – all at lightning speeds. As conventional industrial equipment fail to deposit ultrafine pattens of die attach material and handle such tiny components at required high rates, this calls for development of alternative high-throughput assembly technologies.

Holst Centre is continually pushing the boundaries of hybrid printed electronics technologies to open new frontiers and enable new promising applications. Leveraging on over a decade-long experience in development and maturing of Laser Induced Forward Transfer (LIFT) technology and bringing it to the next level, we have developed a new laser-assisted printing technology – Volume-Controlled Laser Printing (VCLP) – capable of high-throughput deposition of ultrafine interconnects, such as conductive adhesives and solder pastes, from structured carrier plated covered with a proprietary permanent release layer. At Holst Centre we believe that high-throughput deposition of ultrafine interconnect patterns using VCLP technology opens up new possibilities for various applications, particularly, flip chip integration of micro-LED displays.

To complement VCLP interconnect printing technology and complete high-throughput integration of microcomponents, at Holst Centre we have developed another laser-assisted technology targeted to selectively and accurately transfer microcomponents from carrier wafers populated with high-density arrays of microcomponents. The technology has no fundamental limits to scale down to transfer of sub-10 µm microcomponents with dicing street as narrow as 5 µm. We have already demonstrated that our innovative and proprietary release stack developed at Holst Centre enables high-throughput, fast and well-controlled transfer of microcomponents, as small as 40x40x10 µm3 with 20 µm dicing street.

Laser-Assisted High-throughput microLED Assembly

3.30PM

With the growing demand for ever-smaller devices, such as mini- and microLED displays with higher resolution rates, there is an unstoppable trend towards miniaturisation of components. High-speed, mass-production of these electronics is getting more and more difficult, because the handling and accurate placement of these tiny components is very challenging. Each component needs to be carefully selected, transferred and then accurately placed and assembled with interconnects – all at lightning speeds. As conventional industrial equipment fail to deposit ultrafine pattens of die attach material and handle such tiny components at required high rates, this calls for development of alternative high-throughput assembly technologies.

Holst Centre is continually pushing the boundaries of hybrid printed electronics technologies to open new frontiers and enable new promising applications. Leveraging on over a decade-long experience in development and maturing of Laser Induced Forward Transfer (LIFT) technology and bringing it to the next level, we have developed a new laser-assisted printing technology – Volume-Controlled Laser Printing (VCLP) – capable of high-throughput deposition of ultrafine interconnects, such as conductive adhesives and solder pastes, from structured carrier plated covered with a proprietary permanent release layer. At Holst Centre we believe that high-throughput deposition of ultrafine interconnect patterns using VCLP technology opens up new possibilities for various applications, particularly, flip chip integration of micro-LED displays.

To complement VCLP interconnect printing technology and complete high-throughput integration of microcomponents, at Holst Centre we have developed another laser-assisted technology targeted to selectively and accurately transfer microcomponents from carrier wafers populated with high-density arrays of microcomponents. The technology has no fundamental limits to scale down to transfer of sub-10 µm microcomponents with dicing street as narrow as 5 µm. We have already demonstrated that our innovative and proprietary release stack developed at Holst Centre enables high-throughput, fast and well-controlled transfer of microcomponents, as small as 40x40x10 µm3 with 20 µm dicing street.

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30 Nov 2022

CEA

Key challenges for hybridizing GaN microleds and CMOS circuits

Wednesday

3.45PM

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François Templier

Strategic Marketing

GaN microled is the key display technology for the next generation AR/MR glasses and Metaverse. Microled arrays driven by CMOS circuits are needed for GaN microdisplays and large area displays.
Several technologies can be used to hybridize the two parts. We will review the challenges for their fabrication, show solution provided such as microtube technology and recent results with hybrid bonding.

Key challenges for hybridizing GaN microleds and CMOS circuits

3.45PM

GaN microled is the key display technology for the next generation AR/MR glasses and Metaverse. Microled arrays driven by CMOS circuits are needed for GaN microdisplays and large area displays.
Several technologies can be used to hybridize the two parts. We will review the challenges for their fabrication, show solution provided such as microtube technology and recent results with hybrid bonding.

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30 Nov 2022

ALLOS Semiconductors

Development of GaN uLEDs on 300mm Si wafers

Wednesday

4.00PM

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Alexander Loesing

Co Founder

Development of GaN uLEDs on 300mm Si wafers

4.00PM

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30 Nov 2022

Networking Break

Meet The Speakers/Networking

Wednesday

4.15PM

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Talk Demo

Meet The Speakers/Networking

4.15PM

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30 Nov 2022

VueReal

A solution for producing cost-competitive microLED displays

Wednesday

4.40PM

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Reza Chaj

CEO

We have developed a versatile, flexible and sustainable printing process to print micrometre semiconductor/optoelectronic devices into a surface to create functional surfaces such as displays at the yield and throughput required for such products. In addition, we have developed a self-aligned process that can enable the ultimate displays needed for augmented reality (super high brightness, ultra-high resolution, full colour, low power, and very compact).

The cartridge-based printing process is developed to offer a simple, scalable tool with faster throughput, higher yield, and high uniformity. This solution does not require picking microLED for every transfer and does not require a laser for releasing microLEDs into the display substrate. As a result, it benefits from simple tools that can be scaled to a large area and offer high throughput due to simple process steps.

A solution for producing cost-competitive microLED displays

4.40PM

We have developed a versatile, flexible and sustainable printing process to print micrometre semiconductor/optoelectronic devices into a surface to create functional surfaces such as displays at the yield and throughput required for such products. In addition, we have developed a self-aligned process that can enable the ultimate displays needed for augmented reality (super high brightness, ultra-high resolution, full colour, low power, and very compact).

The cartridge-based printing process is developed to offer a simple, scalable tool with faster throughput, higher yield, and high uniformity. This solution does not require picking microLED for every transfer and does not require a laser for releasing microLEDs into the display substrate. As a result, it benefits from simple tools that can be scaled to a large area and offer high throughput due to simple process steps.

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30 Nov 2022

Luxnour

The Manufacturability Attributes of the Electromagnetic Pattern-Sensitive Head Technology for Massive Parallel Transfer of Micro-LEDs"

Wednesday

4.55PM

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Makarem Hussein

President

The Manufacturability Attributes of the Electromagnetic Pattern-Sensitive Head Technology for Massive Parallel Transfer of Micro-LEDs"

4.55PM

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30 Nov 2022

MICLEDI microdisplays

MicroLED display integration on 300mm Advanced CMOS platform

Wednesday

5.10PM

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Soeren Steudel

Co-founder & CTO

Tight pitch integration of compound semiconductor with advanced node CMOS like in microLED displays requires a full wafer level monolithic approach in 300mm. At pitches below 5um, the CMOS bonding is at the center and cannot be considered as an afterthought of a great LED process. Here we show a 9150ppi µLED process-flow with backplane integration that is realized in a 300mm CMOS pilot line using standard volume manufacturing equipment with a similar integration scheme as is done for 3D-stacked backside illuminated imager (BSI). This includes the realization of wafer level optics for beam-shaping. The achieved brightness exceeds 1Mnits. We discuss the inter-dependency of pitch vs manufacturing yield including epi-defectivity and epi-uniformity.

MicroLED display integration on 300mm Advanced CMOS platform

5.10PM

Tight pitch integration of compound semiconductor with advanced node CMOS like in microLED displays requires a full wafer level monolithic approach in 300mm. At pitches below 5um, the CMOS bonding is at the center and cannot be considered as an afterthought of a great LED process. Here we show a 9150ppi µLED process-flow with backplane integration that is realized in a 300mm CMOS pilot line using standard volume manufacturing equipment with a similar integration scheme as is done for 3D-stacked backside illuminated imager (BSI). This includes the realization of wafer level optics for beam-shaping. The achieved brightness exceeds 1Mnits. We discuss the inter-dependency of pitch vs manufacturing yield including epi-defectivity and epi-uniformity.

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30 Nov 2022

XTPL

Sub-micron digital printing for microLED microbumps and QD Color Conversion

Wednesday

5.25PM

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Lukasz Kosior

Business Development Manager

Ultra-Precise Deposition (UPD) is an additive manufacturing technique for fabricating conductive and non-conductive features at a micrometer scale. The process does not require an electric field, the deposition can be made on any substrate (conductive and non-conductive, planar and 3D) and materials with viscosities up to 1 000 00 cP can be printed in full resolution range. The combination of unique features can be used for fabricating next-generation OLED, MicroLED, and QD-LED displays.
Due to precise pressure control and the system's design, UPD allows depositing material with femtoliter precision. Together with the possibility to deposit materials with viscosities up to 1 000 000 cP and high solid content the UPD technology can be used for depositing conductive microdots below 10 µm in diameter and a very high aspect ratio for flip-chip application (for example micro-LED assembly).
UPD technology can also be used for the deposition of color-conversion layers based on quantum dots. We demonstrated technology that allows direct deposition of Quantum Dots material, simplifying the whole process and reducing the overall manufacturing cost. Moreover, it increases resolution: microdots currently obtained on the market usually have about 50 μm, the minimum is 20 μm – while we demonstrated with UPD technology dots with a diameter of even less than 5 μm. Compared to other digital additive manufacturing techniques like inkjet and EHD, UPD technology allows the deposit of high uniformity and repeatability structures with the use of inks with a higher concentration of QDs. This, according to Beer’s law, directly affects light absorption by the QDs. The combination of unique capabilities of the UPD printing method provides the solution for efficient fabrication of QD color conversion for next-generation Micro-LED displays.

Sub-micron digital printing for microLED microbumps and QD Color Conversion

5.25PM

Ultra-Precise Deposition (UPD) is an additive manufacturing technique for fabricating conductive and non-conductive features at a micrometer scale. The process does not require an electric field, the deposition can be made on any substrate (conductive and non-conductive, planar and 3D) and materials with viscosities up to 1 000 00 cP can be printed in full resolution range. The combination of unique features can be used for fabricating next-generation OLED, MicroLED, and QD-LED displays.
Due to precise pressure control and the system's design, UPD allows depositing material with femtoliter precision. Together with the possibility to deposit materials with viscosities up to 1 000 000 cP and high solid content the UPD technology can be used for depositing conductive microdots below 10 µm in diameter and a very high aspect ratio for flip-chip application (for example micro-LED assembly).
UPD technology can also be used for the deposition of color-conversion layers based on quantum dots. We demonstrated technology that allows direct deposition of Quantum Dots material, simplifying the whole process and reducing the overall manufacturing cost. Moreover, it increases resolution: microdots currently obtained on the market usually have about 50 μm, the minimum is 20 μm – while we demonstrated with UPD technology dots with a diameter of even less than 5 μm. Compared to other digital additive manufacturing techniques like inkjet and EHD, UPD technology allows the deposit of high uniformity and repeatability structures with the use of inks with a higher concentration of QDs. This, according to Beer’s law, directly affects light absorption by the QDs. The combination of unique capabilities of the UPD printing method provides the solution for efficient fabrication of QD color conversion for next-generation Micro-LED displays.

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30 Nov 2022

Morphotonics

Roll-to-Plate (R2P) Nanoimprinting for MicroLens Arrays on Mini-MicroLEDs

Wednesday

5.40PM

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Erhan Ercan

Head of Global Business Development

Morphotonics has set the standard in the replication of structures that range from 500 microns down to 50 nanometers on large areas of greater than 1-meter square. Our Roll-to-Plate (R2P) technology and
equipment not only enable manufacturing scalability (thus lowering unit costs) but also offer high replication fidelity down to picometer-scale. R2P technology is already being used to manufacture optical components inside commercial displays currently on the market. Additionally, R2P-based waveguide manufacturing is a strong candidate for addressing the high-volume manufacturing needs of emerging Augmented Reality (AR) glasses.
We have replicated many Micro Lens Array (MLA) optical structures for a variety of applications. Using aligned micro-optics, we can address the light collimation challenges that Mini- and MicroLEDs face to
achieve higher energy efficiency and lower power consumption. We are currently developing equipment that will significantly improve the overlay accuracy down to ±5 microns, allowing us to address the optical collimation needs of MicroLED displays.
Consequently, we are exploring several ways to address this emerging segment of the display market inthe near future.

Roll-to-Plate (R2P) Nanoimprinting for MicroLens Arrays on Mini-MicroLEDs

5.40PM

Morphotonics has set the standard in the replication of structures that range from 500 microns down to 50 nanometers on large areas of greater than 1-meter square. Our Roll-to-Plate (R2P) technology and
equipment not only enable manufacturing scalability (thus lowering unit costs) but also offer high replication fidelity down to picometer-scale. R2P technology is already being used to manufacture optical components inside commercial displays currently on the market. Additionally, R2P-based waveguide manufacturing is a strong candidate for addressing the high-volume manufacturing needs of emerging Augmented Reality (AR) glasses.
We have replicated many Micro Lens Array (MLA) optical structures for a variety of applications. Using aligned micro-optics, we can address the light collimation challenges that Mini- and MicroLEDs face to
achieve higher energy efficiency and lower power consumption. We are currently developing equipment that will significantly improve the overlay accuracy down to ±5 microns, allowing us to address the optical collimation needs of MicroLED displays.
Consequently, we are exploring several ways to address this emerging segment of the display market inthe near future.

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30 Nov 2022

Networking Break

Meet The Speakers/Networking

Wednesday

5.55PM

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Meet The Speakers/Networking

5.55PM

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30 Nov 2022

Yole Intelligence

Trends in miniLED technologies, market and supply chain.

Wednesday

6.20PM

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Eric Virey

Senior Market and Technology Analyst - Displays

MicroLED is still mostly in the process of transitioning from the lab to high-volume manufacturing. MiniLEDs, on the other hand, have already attracted more than $15 billion of investment for manufacturing infrastructure and are commonly used in high volume consumer products as well as in B2B, direct view LED displays.
MiniLEDs backlights can supercharge LCD panels, allowing them to compete against OLEDs in high-end, high-added value consumer markets. In industrial markets, narrow pixel pitch miniLED displays are growing at a 24% CAGR.
With OLED continuously improving, is the window of opportunity already closing for miniLED backlights? Will miniLED dominate in direct view LED displays and converge with microLEDs to break into the consumer market?
This presentation will discuss miniLED markets, applications, supply chain as well as technology trends based on device teardowns and performance measurements conducted by Yole Group.

Trends in miniLED technologies, market and supply chain.

6.20PM

MicroLED is still mostly in the process of transitioning from the lab to high-volume manufacturing. MiniLEDs, on the other hand, have already attracted more than $15 billion of investment for manufacturing infrastructure and are commonly used in high volume consumer products as well as in B2B, direct view LED displays.
MiniLEDs backlights can supercharge LCD panels, allowing them to compete against OLEDs in high-end, high-added value consumer markets. In industrial markets, narrow pixel pitch miniLED displays are growing at a 24% CAGR.
With OLED continuously improving, is the window of opportunity already closing for miniLED backlights? Will miniLED dominate in direct view LED displays and converge with microLEDs to break into the consumer market?
This presentation will discuss miniLED markets, applications, supply chain as well as technology trends based on device teardowns and performance measurements conducted by Yole Group.

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30 Nov 2022

SmartKem

Monolithic MicroLED Arrays Using Organic Thin-Film Transistors

Wednesday

6.35PM

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Ian Jenks

CEO

Monolithic MicroLED Arrays Using Organic Thin-Film Transistors

6.35PM

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30 Nov 2022

Terecircuits

The Path to Lowest Cost of Ownership for MicroLED Display Manufacturing

Wednesday

6.50PM

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Wayne Rickard

CEO

As MicroLED displays move from prototype to production, there is a near-zero tolerance for dead pixels, which can be easily detected by the human eye. Meeting this requirement demands accurate transfer and placement of millions of micron-scale components, each of which carries the potential to kill yield through transfer damage or placement error. Conventional assembly techniques have been challenged by these requirements, resulting in a rush to develop new assembly techniques that maximize yield, facilitate defect repair, and support throughput several orders of magnitude greater than today’s best-in-class approaches. Laser-based LLO/LIFT is now a fait accompli for MicroLED panel assembly tools as evidenced by announcements from at least 5 major capital equipment companies. Critical to the LIFT process is the Transfer Material, which needs to both hold the MicroLEDs securely without drift prior to release, then when activated by the LIFT process, cleanly release and propel the MicroLEDs towards the substrate without damage and with no residue. This presentation will show how a photopolymer transfer material specifically engineered to support the LIFT process can achieve sub-micron placement accuracy while enabling additional optimizations in the entire subsystem, resulting in the lowest Cost of Ownership. For example, a lower activation energy supports the use of a lower-cost laser, and masks can be used to facilitate mass transfer without adding complexity to the positioning stages. These optimizations of the LLO system have a direct impact on yield, throughput, and cost.

The Path to Lowest Cost of Ownership for MicroLED Display Manufacturing

6.50PM

As MicroLED displays move from prototype to production, there is a near-zero tolerance for dead pixels, which can be easily detected by the human eye. Meeting this requirement demands accurate transfer and placement of millions of micron-scale components, each of which carries the potential to kill yield through transfer damage or placement error. Conventional assembly techniques have been challenged by these requirements, resulting in a rush to develop new assembly techniques that maximize yield, facilitate defect repair, and support throughput several orders of magnitude greater than today’s best-in-class approaches. Laser-based LLO/LIFT is now a fait accompli for MicroLED panel assembly tools as evidenced by announcements from at least 5 major capital equipment companies. Critical to the LIFT process is the Transfer Material, which needs to both hold the MicroLEDs securely without drift prior to release, then when activated by the LIFT process, cleanly release and propel the MicroLEDs towards the substrate without damage and with no residue. This presentation will show how a photopolymer transfer material specifically engineered to support the LIFT process can achieve sub-micron placement accuracy while enabling additional optimizations in the entire subsystem, resulting in the lowest Cost of Ownership. For example, a lower activation energy supports the use of a lower-cost laser, and masks can be used to facilitate mass transfer without adding complexity to the positioning stages. These optimizations of the LLO system have a direct impact on yield, throughput, and cost.

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30 Nov 2022

NS Nanotech

Nanowire LEDs for Microdisplays

Wednesday

7.05PM

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Seth Coe-Sullivan

President & CEO

Submicron-scale, high-efficiency, multicolor light sources monolithically integrated on a single chip are required by the display technologies of tomorrow. Today’s GaN-based blue LEDs are bright, stable, and efficient but are produced in only one color across an entire wafer. And achieving efficient green and red LEDs using GaN-based technology has proven stubbornly difficult. But recent InGaN nanowire structure studies have shown promise to solve such critical challenges. Nanostructured LEDs exhibit low dislocation densities and improved light extraction efficiency. Multicolored emission can be demonstrated from InGaN nanowire arrays integrated on a single chip. The emission cone and direction can be tailored by the one-dimensional columnar design of each nanostructure, essential to realizing ultrahigh definition displays. Critical to these emerging technology areas is the realization of full-color, tunable emitters on a single chip. This capability requires fine-tuning of alloy composition in different nanostructured regions with compositional variations made in a single process step.

Dr. Coe-Sullivan will describe how display technologies based on nano-LED pixel arrays integrated on a single chip have the potential to become the ultimate emissive light sources for televisions and electronic signage, microdisplays for augmented reality and virtual reality (AR/VR) applications, mobile phones, smart watches, and many other applications. He will explain how monolothic integration of single nanowire, multicolor LEDs on a single substrate can be achieved by incorporating multiple InGaN/GaN quantum discs in GaN nanowires of various diameters grown in selective area epitaxy in a single molecular-beam epitaxy (MBE) process step. Red, orange, green, and blue InGaN/GaN nanowire LEDs can be formed simultaneously on the same chip, with representative current-voltage curves and strong visible light emission. This process offers a new avenue for achieving multiprimary optoelectronic devices at the nanometer level on a single chip for many applications, including imaging, micro-LEDs, microdisplays, sensing, spectroscopy, communications, and UVC disinfection.

Nanowire LEDs for Microdisplays

7.05PM

Submicron-scale, high-efficiency, multicolor light sources monolithically integrated on a single chip are required by the display technologies of tomorrow. Today’s GaN-based blue LEDs are bright, stable, and efficient but are produced in only one color across an entire wafer. And achieving efficient green and red LEDs using GaN-based technology has proven stubbornly difficult. But recent InGaN nanowire structure studies have shown promise to solve such critical challenges. Nanostructured LEDs exhibit low dislocation densities and improved light extraction efficiency. Multicolored emission can be demonstrated from InGaN nanowire arrays integrated on a single chip. The emission cone and direction can be tailored by the one-dimensional columnar design of each nanostructure, essential to realizing ultrahigh definition displays. Critical to these emerging technology areas is the realization of full-color, tunable emitters on a single chip. This capability requires fine-tuning of alloy composition in different nanostructured regions with compositional variations made in a single process step.

Dr. Coe-Sullivan will describe how display technologies based on nano-LED pixel arrays integrated on a single chip have the potential to become the ultimate emissive light sources for televisions and electronic signage, microdisplays for augmented reality and virtual reality (AR/VR) applications, mobile phones, smart watches, and many other applications. He will explain how monolothic integration of single nanowire, multicolor LEDs on a single substrate can be achieved by incorporating multiple InGaN/GaN quantum discs in GaN nanowires of various diameters grown in selective area epitaxy in a single molecular-beam epitaxy (MBE) process step. Red, orange, green, and blue InGaN/GaN nanowire LEDs can be formed simultaneously on the same chip, with representative current-voltage curves and strong visible light emission. This process offers a new avenue for achieving multiprimary optoelectronic devices at the nanometer level on a single chip for many applications, including imaging, micro-LEDs, microdisplays, sensing, spectroscopy, communications, and UVC disinfection.

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30 Nov 2022

UC Santa Barbara

Developments in High Efficiency Ultra-Small Micro-LEDs Based on III-Nitrides

Wednesday

7.20PM

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Steven DenBaars

Professor & Co-Director, SSLEEC

The developments of high performance InGaN based RGB micro-light-emitting diodes (µLEDs) are discussed. Through novel epitaxial growth and processing, and transparent packaging we have achieved external quantum efficiencies as high as 58% EQE at 450nm for microLEDs. The critical challenges of µLEDs, namely full-color scheme, decreasing pixel size and mass transfer technique, and their potential solutions are explored. Recently, we have demonstrated efficient microLEDs emitting in the blue to green at dimensions as small of 1 micron. Using strain relaxation methods we have also extending the wavelength range of the InGaN alloys as into the red with emission as long as 640nm. Red InGaN based red MicroLEDs with efficiencies of 4% has been fabricated, and they display superior temperature performance in comparison to AlGaInP based devices.

Developments in High Efficiency Ultra-Small Micro-LEDs Based on III-Nitrides

7.20PM

The developments of high performance InGaN based RGB micro-light-emitting diodes (µLEDs) are discussed. Through novel epitaxial growth and processing, and transparent packaging we have achieved external quantum efficiencies as high as 58% EQE at 450nm for microLEDs. The critical challenges of µLEDs, namely full-color scheme, decreasing pixel size and mass transfer technique, and their potential solutions are explored. Recently, we have demonstrated efficient microLEDs emitting in the blue to green at dimensions as small of 1 micron. Using strain relaxation methods we have also extending the wavelength range of the InGaN alloys as into the red with emission as long as 640nm. Red InGaN based red MicroLEDs with efficiencies of 4% has been fabricated, and they display superior temperature performance in comparison to AlGaInP based devices.

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1 Dec 2022

TechBlick

Welcome & Introduction

Thursday

12.30PM

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Khasha Ghaffarzadeh

Talk Demo

Welcome & Introduction

12.30PM

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1 Dec 2022

QustomDot

Cd-free Quantum Dot Color Converters for MicroLED Applications

Thursday

12:40PM

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Willem Walravens

CTO

MicroLED technology is poised to disrupt the display market by bringing a whole new value proposition to consumers products. Flexible, high brightness and excellent lifetime are but a few keywords to describe a new generation of displays spanning virtual reality to wearable applications. To date, challenges in scaling pick-and-place processes and in producing highly efficient red and green native microLEDs hamper microLED mass production. A quantum dot (QD) color conversion strategy to produce an RGB display from an array of blue microLEDs is an elegant way to simplify the manufacturing process and to overcome several technological challenges in the mass-transfer process, the display brightness and the driving electronics.
Quantum dots have earned their place as down-convertors for displays since the commercialization of Cd-based QDs in LCDs in the early 2010’s and the commercialization of QD-OLED almost a decade later. The benefits in terms of color quality and conversion efficiency are widely recognized as key selling points. A shift towards greener, Cd-free materials has been initiated by European RoHS directives that restrict the use of Cd in consumer appliances. This stimulated the development of InP- based QDs, which can nowadays be produced through economical synthesis routes and with excellent optical properties.
The successful application of RoHS-compliant QDs for microLED combines challenging requirements in terms of absorption, solid loading, conversion efficiency and photostability. Over the years, we have developed on-chip grade and RoHS-compliant QDs that can showcase the viability of InP-based QDs for microLED applications. We will discuss our progress on red and green QDs towards relevant film thicknesses and light intensities.

Cd-free Quantum Dot Color Converters for MicroLED Applications

12:40PM

MicroLED technology is poised to disrupt the display market by bringing a whole new value proposition to consumers products. Flexible, high brightness and excellent lifetime are but a few keywords to describe a new generation of displays spanning virtual reality to wearable applications. To date, challenges in scaling pick-and-place processes and in producing highly efficient red and green native microLEDs hamper microLED mass production. A quantum dot (QD) color conversion strategy to produce an RGB display from an array of blue microLEDs is an elegant way to simplify the manufacturing process and to overcome several technological challenges in the mass-transfer process, the display brightness and the driving electronics.
Quantum dots have earned their place as down-convertors for displays since the commercialization of Cd-based QDs in LCDs in the early 2010’s and the commercialization of QD-OLED almost a decade later. The benefits in terms of color quality and conversion efficiency are widely recognized as key selling points. A shift towards greener, Cd-free materials has been initiated by European RoHS directives that restrict the use of Cd in consumer appliances. This stimulated the development of InP- based QDs, which can nowadays be produced through economical synthesis routes and with excellent optical properties.
The successful application of RoHS-compliant QDs for microLED combines challenging requirements in terms of absorption, solid loading, conversion efficiency and photostability. Over the years, we have developed on-chip grade and RoHS-compliant QDs that can showcase the viability of InP-based QDs for microLED applications. We will discuss our progress on red and green QDs towards relevant film thicknesses and light intensities.

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1 Dec 2022

Sharp

High resolution 3600ppi full color Silicon Display for AR glasses and HMD

Thursday

1.00PM

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Yasuaki Hirano

HMDs and AR glasses are expected to be the next generation communication devices to replace smartphones. There are many prototypes and early products using several display devices. Various display devices have been proposed, including LCD, micro OLED, Laser Beam Scan (LBS), LED LCOS, and Laser LCOS. LCD is one of the major display device for VR HMDs, however, it is very heavy and has a limitation to pixel density. Furthermore, although the laser-based display devices are compact and can achieve high brightness, the image quality of the display is not excellent because of speckle noise, one of the specific issue of laser-based display. Micro OLED and LED LCOS are at a high level of technological maturity and widely used to HMDs, but their brightness is not enough to the outdoor AR. Micro LED has been attracting a lot of attention as a display device to solve disadvantages in other display devices.
We have developed full color micro LED, "Silicon-Display", and demonstrated the first prototype with 1,053 ppi. Figure 1 shows the process-flow of Silicon Display, RGB full-color micro LEDs using color conversion. Blue micro LEDs are formed on a sapphire substrate and one LED array contains 352 x 198 micro LED dies of 24 um x 8 um in size. The cathode (N-type electrode) and anode (P-type electrode) are fabricated for each micro LED die to apply driving voltage independently to each die. LSI with the circuit driving the LEDs is fabricated on Si wafer. The Au bump electrodes are fabricated in accordance with the pitch of the LED dies. LED and LSI chips are divided into chips, and then LED chip is bonded to LSI chip with Au electrodes. After that, the sapphire substrate of the LED is removed by laser lift-off, resulting in a blue monochromatic micro LED display. QDs (Quantum Dots) are patterned on LED dies to generate red and green emission.
Figure 2 shows a schematic diagram of a pixel structure including RGB sub-pixels. To convert blue emission from LEDs to green and red, QDs are fabricated. Color filters are fabricated on the top surface of the QDs to improve color reproducibility. Light shielding walls (LSWs) are also fabricated to prevent optical cross talk.
We developed the 1,053 ppi prototype, however, there is a strong demand for higher resolution for the practical AR application. Therefore, we have been working on a 3,600 ppi prototype. Figure 3 shows the difference between 1,053 ppi and 3,600 ppi. The small size of micro LED dies makes brightness low due to small active emission area. To solve this problem, we designed and applied the common cathode structure. The area of micro LEDs contributing to light emission in one pixel was improved from 23% to 38%. As a result, brightness of 11 knits was achieved.
The current brightness is not sufficient for outdoor AR applications. We plan to improve the brightness furthermore by improving the QD performance and the LSW structure.

High resolution 3600ppi full color Silicon Display for AR glasses and HMD

1.00PM

HMDs and AR glasses are expected to be the next generation communication devices to replace smartphones. There are many prototypes and early products using several display devices. Various display devices have been proposed, including LCD, micro OLED, Laser Beam Scan (LBS), LED LCOS, and Laser LCOS. LCD is one of the major display device for VR HMDs, however, it is very heavy and has a limitation to pixel density. Furthermore, although the laser-based display devices are compact and can achieve high brightness, the image quality of the display is not excellent because of speckle noise, one of the specific issue of laser-based display. Micro OLED and LED LCOS are at a high level of technological maturity and widely used to HMDs, but their brightness is not enough to the outdoor AR. Micro LED has been attracting a lot of attention as a display device to solve disadvantages in other display devices.
We have developed full color micro LED, "Silicon-Display", and demonstrated the first prototype with 1,053 ppi. Figure 1 shows the process-flow of Silicon Display, RGB full-color micro LEDs using color conversion. Blue micro LEDs are formed on a sapphire substrate and one LED array contains 352 x 198 micro LED dies of 24 um x 8 um in size. The cathode (N-type electrode) and anode (P-type electrode) are fabricated for each micro LED die to apply driving voltage independently to each die. LSI with the circuit driving the LEDs is fabricated on Si wafer. The Au bump electrodes are fabricated in accordance with the pitch of the LED dies. LED and LSI chips are divided into chips, and then LED chip is bonded to LSI chip with Au electrodes. After that, the sapphire substrate of the LED is removed by laser lift-off, resulting in a blue monochromatic micro LED display. QDs (Quantum Dots) are patterned on LED dies to generate red and green emission.
Figure 2 shows a schematic diagram of a pixel structure including RGB sub-pixels. To convert blue emission from LEDs to green and red, QDs are fabricated. Color filters are fabricated on the top surface of the QDs to improve color reproducibility. Light shielding walls (LSWs) are also fabricated to prevent optical cross talk.
We developed the 1,053 ppi prototype, however, there is a strong demand for higher resolution for the practical AR application. Therefore, we have been working on a 3,600 ppi prototype. Figure 3 shows the difference between 1,053 ppi and 3,600 ppi. The small size of micro LED dies makes brightness low due to small active emission area. To solve this problem, we designed and applied the common cathode structure. The area of micro LEDs contributing to light emission in one pixel was improved from 23% to 38%. As a result, brightness of 11 knits was achieved.
The current brightness is not sufficient for outdoor AR applications. We plan to improve the brightness furthermore by improving the QD performance and the LSW structure.

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1 Dec 2022

PlayNitride

Development and Solutions of MicroLED Displays for Emerging Applications

Thursday

1.20PM

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Falcon Liu

Marketing Director

MicroLED display is believed to be the ultimate display which fulfills all display feature requirements. There are already many MicroLED demonstrations in different applications, such as large-size TV, automotive transparent display, flexible display, wearable device, and picture generation unit of AR and HUD. MicroLED is already proved its high brightness, high contrast, wide color gamut, good reliability, flexible, and high transparency.

To realize such high performance MicroLED display, we have three major solutions for different applications. The first solution is PixeLED Display, which is to build MicroLED displays on TFT substrate. This is the best solution to produce transparent display, flexible display, and most of display applications. The second solution is PixeLED Matrix, which is MicroLED on modular PCB and could enable ultra large size fine pitch display. The third solution is µ-PixeLED micro-display for AR glasses with the chip size smaller than 5µm on silicon-based CMOS backplane.

MicroLED can be used in a variety of different application scenarios, and it provides the ultimate visual experience. Whether it is an existing display or an innovative application, MicroLED is the best choice.

Development and Solutions of MicroLED Displays for Emerging Applications

1.20PM

MicroLED display is believed to be the ultimate display which fulfills all display feature requirements. There are already many MicroLED demonstrations in different applications, such as large-size TV, automotive transparent display, flexible display, wearable device, and picture generation unit of AR and HUD. MicroLED is already proved its high brightness, high contrast, wide color gamut, good reliability, flexible, and high transparency.

To realize such high performance MicroLED display, we have three major solutions for different applications. The first solution is PixeLED Display, which is to build MicroLED displays on TFT substrate. This is the best solution to produce transparent display, flexible display, and most of display applications. The second solution is PixeLED Matrix, which is MicroLED on modular PCB and could enable ultra large size fine pitch display. The third solution is µ-PixeLED micro-display for AR glasses with the chip size smaller than 5µm on silicon-based CMOS backplane.

MicroLED can be used in a variety of different application scenarios, and it provides the ultimate visual experience. Whether it is an existing display or an innovative application, MicroLED is the best choice.

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1 Dec 2022

Taiwan Nanocrystals

The Pixel Aspect Ratio Matters – on the Selection of QDCC Materials for Full-Color MicroLED Applications

Thursday

1.40PM

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Ray-Kuang Chiang

The aspect ratio (width to thickness ratio) of the designed pixel pattern in the quantum dot color conversion (QDCC) layer is crucially important to the light extraction and the final performance of the microLED devices. Different level of resolution is required for different products ranged from low (as in public information display) to high (as in AR and VR), which results in different QDCC manufacture processes with different pixel configurations and material specifications. Based on simulation and practical experiments, only a high value of aspect ratio can ensure high light extraction for products of very high pixel resolution such as AR and VR, which requires QDs with higher blue light absorption coefficient to maintain a thin QDCC film thickness. For Iow–PPI process (≤ 200 PPI), IJP (inkjet printing) process is beneficial, while for high–PPI process (≥ 400 PPI), photolithography process is feasible. Both QD IJP ink for printing process and QD photoresist for photolithography process can provide products with color gamut higher than 90% BT2020, and their energy consumption can match the RGB-chip microLEDs.

The Pixel Aspect Ratio Matters – on the Selection of QDCC Materials for Full-Color MicroLED Applications

1.40PM

The aspect ratio (width to thickness ratio) of the designed pixel pattern in the quantum dot color conversion (QDCC) layer is crucially important to the light extraction and the final performance of the microLED devices. Different level of resolution is required for different products ranged from low (as in public information display) to high (as in AR and VR), which results in different QDCC manufacture processes with different pixel configurations and material specifications. Based on simulation and practical experiments, only a high value of aspect ratio can ensure high light extraction for products of very high pixel resolution such as AR and VR, which requires QDs with higher blue light absorption coefficient to maintain a thin QDCC film thickness. For Iow–PPI process (≤ 200 PPI), IJP (inkjet printing) process is beneficial, while for high–PPI process (≥ 400 PPI), photolithography process is feasible. Both QD IJP ink for printing process and QD photoresist for photolithography process can provide products with color gamut higher than 90% BT2020, and their energy consumption can match the RGB-chip microLEDs.

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1 Dec 2022

Saphlux

NPQD Color Converted Micro-LED

Thursday

2.00PM

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Chen Chen

CEO

Micro-LED has long been regarded as the “ultimate display technology“for its compact size, high efficiency, and good reliability. However, as the dimension of LED reduces, problems such as low red efficiency and high system cost start to emerge. Assembling an RGB micro-LED array with less than 5 µm sub-pixel size for AR/VR applications is also rather challenging. Saphlux team developed the first NPQD® color-converted micro-LEDs to address these issues.
NPQD® stands for “Nano-pores for Quantum Dots.” Leveraging our proprietary technologies, a nano-porous structure can be directly formed inside LEDs to serve as a natural vessel for in-situ QD integration. The effective light path can thus be extended to boost the overall efficiency due to the strong scattering effect. The reliability of quantum dots is also improved greatly because of the high thermal conductivity of gallium nitride materials.
Saphlux now supplies NPQD® R-1 micro-LED products in volume for fine-pitch display applications. We also developed NPQD® T-1 full-color Micro-LED array with a sub-pixel size of 2 µm and are now collaborating with customers for AR/VR micro-LED display developments.

NPQD Color Converted Micro-LED

2.00PM

Micro-LED has long been regarded as the “ultimate display technology“for its compact size, high efficiency, and good reliability. However, as the dimension of LED reduces, problems such as low red efficiency and high system cost start to emerge. Assembling an RGB micro-LED array with less than 5 µm sub-pixel size for AR/VR applications is also rather challenging. Saphlux team developed the first NPQD® color-converted micro-LEDs to address these issues.
NPQD® stands for “Nano-pores for Quantum Dots.” Leveraging our proprietary technologies, a nano-porous structure can be directly formed inside LEDs to serve as a natural vessel for in-situ QD integration. The effective light path can thus be extended to boost the overall efficiency due to the strong scattering effect. The reliability of quantum dots is also improved greatly because of the high thermal conductivity of gallium nitride materials.
Saphlux now supplies NPQD® R-1 micro-LED products in volume for fine-pitch display applications. We also developed NPQD® T-1 full-color Micro-LED array with a sub-pixel size of 2 µm and are now collaborating with customers for AR/VR micro-LED display developments.

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1 Dec 2022

Networking Break

Meet The Speakers/Networking

Thursday

2.20PM

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Talk Demo

Meet The Speakers/Networking

2.20PM

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1 Dec 2022

Enjet

Contribution of Electrohydrodynamic (EHD) Inkjet Printing for micro-LED Display Fabrication and Evolution to Multi-Nozzle EHD Inkjet Printhead

Thursday

2.45PM

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