Full color micro-displays with a pixel pitch of below 10 µm are needed for augmented and virtual reality applications. In the native emission approach, high efficiency Red-Green-Blue (RGB) pixels could be achieved using monolithically integrated InGaN based micro-LEDs. We have demonstrated the growth of monolithic RGB InGaN nanopyramids of diameter less than 1 µm by metal organic vapor phase epitaxy (MOVPE). The nanopyramids are obtained by nanoselective area growth using an in situ patterned epitaxial graphene on SiC as an embedded mask. Particularly, the red emitting InGaN/InGaN quantum wells are regular while their In content is very high, up to 40%. Nanoscale optical and structural properties of these RGB nanopyramids will be presented.