Emerging MicroLED technology offers compelling potential for near-eye devices. However, the MicroLED supply chain currently lacks readiness for mass production due to significant manufacturability and cost challenges. For near-eye device applications, this technology requires ultra-fine pixels (<10 micrometers) and highly miniaturized silicon transistors on the backplane. A heterogeneous integration approach adopted from a 3-D semiconductor system can address many MicroLED process technology, design, and cost challenges. This talk is concerned with two main strategies for drastic cost reduction: (1) lowering the cost of individual LEDs through the monolithic fabrication of GaN RGB diodes on a 300 mm silicon wafer, and (2) decreasing frontplane-to-backplane integration costs using wafer-to-wafer bonding, specifically bonding a 300 mm RGB wafer to a 300 mm silicon CMOS wafer. Our presentation will explore these strategies from the perspective of cost-effective and scalable semiconductor system integration, leveraging the mature 300 mm high-volume-manufacturing supply chain extensively used in the semiconductor industry for about 25 years, incorporating high-performance and low-power CMOS design for backplane devices, and utilizing recent advancements in 3-D heterogeneous integration with hybrid bonding.